RF ground configuration for susceptor

Embodiments of the present disclosure generally relate to a substrate support for a process chamber and an RF ground configuration for use therewith. A method of grounding an RF current is also described. The chamber body at least partially defines a process volume therein. A first electrode is disp...

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Bibliographic Details
Main Authors KALSEKAR VIVEK, HAMMOND IV EDWARD P, KHAJA ABDUL AZIZ, THOKACHICHU SATYA, PRABHAKAR VINAY K, YE ZHENG JOHN
Format Patent
LanguageChinese
English
Published 06.08.2024
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Summary:Embodiments of the present disclosure generally relate to a substrate support for a process chamber and an RF ground configuration for use therewith. A method of grounding an RF current is also described. The chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. The base is disposed opposite to the first electrode. The second electrode is disposed in the susceptor. The RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and ground. The RF filter also includes a first inductor coupled to the feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor. 本公开的实施例总体上涉及用于工艺腔室的基板支撑件以及与其一起使用的RF接地配置。还描述了将RF电流接地的方法。腔室主体至少部分地在其中界定工艺容积。第一电极设置在工艺容积中。基座与第一电极相对地设置。第二电极设置在基座中。RF滤波器通过导电杆耦接到第二电极。RF滤波器包括耦接到导电杆
Bibliography:Application Number: CN202410624390