Metal deposition in recessed features using halogen-containing deposition inhibitors

• Main Authors: KARIM, ISHTAK, MANDIA DAVID JOSEPH, BLACKNEY KYLER JORDAN, LAI CHIUKIN STEVEN, GRIFFITH MATTHEW BERTRAM EDWARD
• Format: Patent
• Language: Chinese; English
• Published: 02.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In a deposition process conditioned by the addition of a halogen-containing compound, such as an alkyl halide, a metal film, such as a molybdenum film, is deposited into a semiconductor substrate having one or more recessed features. In certain embodiments, a substrate is pretreated with a halogen-containing compound prior to contacting the substrate with a metal-containing precursor and a reducing agent. In certain embodiments, a pre-treatment is performed such that a halogen-containing compound modifies a surface in a field region of the substrate and a surface near an opening of the recessed feature to a greater extent than a bottom of the recessed feature, where modification of the substrate inhibits metal deposition. Thus, metal deposition with improved step coverage can be obtained. In certain embodiments, deposition conditioned by halogen-containing compounds is used to achieve bottom-up metal growth in recessed features. 在通过添加含卤素化合物(如烷基卤化物)而受到调节的沉积处理中，将金属膜如钼膜沉积至具有一或多个凹陷特征的半导体衬底中。在某些实施方案中，在衬底与含金属前体和还原剂