Cold source Schottky transistor and preparation method thereof, integrated circuit and electronic equipment

• Main Authors: WANG JIALE, ZHANG QIANG, XU JUNHAO, HOU CHAOZHAO, GAN WEIZHUO
• Format: Patent
• Language: Chinese; English
• Published: 02.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention provides a cold source Schottky transistor and a preparation method thereof, an integrated circuit and electronic equipment, relates to the technical field of semiconductors, and is used for improving the on-state current of the cold source Schottky transistor while reducing the sub-threshold swing of the cold source Schottky transistor. The cold source Schottky transistor comprises a channel layer, a source electrode and a drain electrode. The source electrode is located on one side of the channel layer and electrically connected with the channel layer. The source electrode comprises a first part and a second part which are connected with each other, and the second part is located between the first part and the channel layer. The drain electrode is located on the side, away from the source electrode, of the channel layer and electrically connected with the channel layer. Wherein the second part comprises a first surface close to the channel layer, at least two points exist on