Total dose high-voltage resistant NMOS (N-channel metal oxide semiconductor) structure

• Main Authors: WANG LEI, LIU DAN, XIE RUBIN, LI YANFEI, PENG HONG
• Format: Patent
• Language: Chinese; English
• Published: 02.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a total-dose-resistant high-voltage NMOS (N-channel metal oxide semiconductor) structure, and belongs to the technical field of semiconductor devices. The device comprises a gate end, a source end, a drain end, a body region, a substrate, a field region, a well, a drift regio...