Total dose high-voltage resistant NMOS (N-channel metal oxide semiconductor) structure
The invention discloses a total-dose-resistant high-voltage NMOS (N-channel metal oxide semiconductor) structure, and belongs to the technical field of semiconductor devices. The device comprises a gate end, a source end, a drain end, a body region, a substrate, a field region, a well, a drift regio...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
02.08.2024
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Subjects | |
Online Access | Get full text |
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