Total dose high-voltage resistant NMOS (N-channel metal oxide semiconductor) structure

• Main Authors: WANG LEI, LIU DAN, XIE RUBIN, LI YANFEI, PENG HONG
• Format: Patent
• Language: Chinese; English
• Published: 02.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a total-dose-resistant high-voltage NMOS (N-channel metal oxide semiconductor) structure, and belongs to the technical field of semiconductor devices. The device comprises a gate end, a source end, a drain end, a body region, a substrate, a field region, a well, a drift region, a reinforcing region, a substrate, gate oxide and an island-shaped field region of the NMOS device. According to the invention, the body region is separated from the source-drain end, and an electric leakage channel between the source-drain and the field region is inhibited; the island-shaped field region is used for leading out polycrystals, and the area of a non-channel region under the polycrystals is reduced; high-dose P-type heavy doping is carried out on the periphery of a polycrystalline lower non-channel region and an island-shaped field region, electric leakage channels between a source and a drain and between the field regions are inhibited, and the total dose resistance of the high-voltage NMOS device