Total dose high-voltage resistant NMOS (N-channel metal oxide semiconductor) structure
The invention discloses a total-dose-resistant high-voltage NMOS (N-channel metal oxide semiconductor) structure, and belongs to the technical field of semiconductor devices. The device comprises a gate end, a source end, a drain end, a body region, a substrate, a field region, a well, a drift regio...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
02.08.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a total-dose-resistant high-voltage NMOS (N-channel metal oxide semiconductor) structure, and belongs to the technical field of semiconductor devices. The device comprises a gate end, a source end, a drain end, a body region, a substrate, a field region, a well, a drift region, a reinforcing region, a substrate, gate oxide and an island-shaped field region of the NMOS device. According to the invention, the body region is separated from the source-drain end, and an electric leakage channel between the source-drain and the field region is inhibited; the island-shaped field region is used for leading out polycrystals, and the area of a non-channel region under the polycrystals is reduced; high-dose P-type heavy doping is carried out on the periphery of a polycrystalline lower non-channel region and an island-shaped field region, electric leakage channels between a source and a drain and between the field regions are inhibited, and the total dose resistance of the high-voltage NMOS device |
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Bibliography: | Application Number: CN202410522197 |