GaN nanowire acceleration sensor with multistage stress isolation structure

• Main Authors: LIU PENGBO, ZHAO JIAN, SHANG WENHAI, DONG ZEYUAN
• Format: Patent
• Language: Chinese; English
• Published: 02.08.2024
• Subjects: INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MEASURING; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES; MICROSTRUCTURAL TECHNOLOGY; NANOTECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TESTING; TRANSPORTING

The embodiment of the invention provides a GaN nanowire acceleration sensor with a multistage stress isolation structure, and relates to the field of micromechanical sensors. The acceleration sensor comprises a substrate, the substrate is provided with a groove, the inner wall of the groove is provided with a GaN nanowire sensitive beam, and the end part of the GaN nanowire sensitive beam is connected with a suspended mass block; the periphery of the groove is provided with a first through-type stress release groove, and the periphery of the first through-type stress release groove is provided with a second through-type stress release groove. According to the GaN nanowire acceleration sensor with the multistage stress isolation structure, the problems that a traditional acceleration sensor based on a bulk Si material is low in detection sensitivity, poor in high-temperature robustness and serious in signal temperature drift can be solved. 本公开实施例提供的带有多级应力隔离结构的GaN纳米线加速度传感器，涉及微机械传感器领域。该加速度传感器包括衬底，所述衬底上设置有凹槽，所述凹槽