High-temperature-resistant MEMS piezoresistive micro-pressure sensitive chip structure and preparation method thereof

• Main Authors: ZHANG ZUWEI, YUAN YUPENG, WU GAOMI, MIAO JINWEI, HUANG JING
• Format: Patent
• Language: Chinese; English
• Published: 02.08.2024
• Subjects: MEASURING; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; TESTING; TRANSPORTING

The invention belongs to the technical field of MEMS piezoresistive pressure sensors, and particularly relates to a high-temperature-resistant MEMS piezoresistive micro-pressure sensitive chip structure and a preparation method thereof. The structure comprises a base layer, an SOI substrate and a metal layer which are stacked from bottom to top, the SOI substrate comprises a substrate layer, a bottom silicon layer, a buried oxide layer and a device layer; the substrate layer comprises a supporting substrate and an air cavity; the bottom silicon layer, the buried oxide layer and the device layer form a beam-membrane coupling type pressure sensing membrane; the beam-membrane coupling type pressure sensing membrane comprises a central membrane and a connecting beam; a plurality of piezoresistors are arranged in the device layer, and the piezoresistors are distributed in stress concentration areas of the connecting beams; the metal layer comprises a metal bonding pad and an interconnection lead, and the metal bon