Polyacid oxygen cluster-based semiconductor material, preparation method thereof and application of polyacid oxygen cluster-based semiconductor material in field of radiation detection

• Main Authors: ZHENG FAKUN, WANG PENGKUN, XU ZHONGNING, GUO GUOCONG, WANG WENFEI, LI BAOYI, LU JIAN, MI JIARONG
• Format: Patent
• Language: Chinese; English
• Published: 30.07.2024
• Subjects: CHEMISTRY; COMPOSITIONS BASED THEREON; HUMAN NECESSITIES; HYGIENE; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MEASUREMENT OF NUCLEAR OR X-RADIATION; MEASURING; MEDICAL OR VETERINARY SCIENCE; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; PHYSICS; PREPARATIONS FOR MEDICAL, DENTAL, OR TOILET PURPOSES; TESTING; THEIR PREPARATION OR CHEMICAL WORKING-UP

The invention discloses a polyacid oxygen cluster-based semiconductor material. The molecular formula of the polyacid oxygen cluster-based semiconductor material is [M3 (I) (P) (DTB) 3] n, wherein n is infinity and represents continuous repeated infinite extension; m is selected from one of Cu < + > and Ag < + >; p is-3 valence phosphomolybdic acid or phosphotungstic acid after complete dehydrogenation; and DTB is 1H-1, 2, 4-triazole or 1, 1-bis (1, 4-phenylene). The polyacid oxygen cluster-based semiconductor material provided by the invention is simple in preparation method, has the characteristics of better X-ray attenuation capability, large carrier mobility and life product value and high X-ray detection sensitivity, and has application value in the fields of direct X-ray radiation detection, radiation detection dosimeters, X-ray semiconductor medical imaging and the like. 本申请公开了一种多酸氧簇基半导体材料，所述多酸氧簇基半导体材料的分子式为：[M3(I)(P)(DTB)3]n；其中，n为∞，表示不断重复无限延伸；M选自Cu+、Ag+中的一种；P为-3价的完全脱氢后磷钼酸或磷钨酸；DTB为1H-1,2,4-三唑,1,1-双(1,4-