Preparation method of silicon carbide VDMOS (Vertical Double-diffused Metal Oxide Semiconductor) capable of reducing voltage drop of body diode

• Main Authors: ZHANG YUJIE, ZHANG CHANGSHA, CHEN TONG, LI YUNJI
• Format: Patent
• Language: Chinese; English
• Published: 26.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a preparation method of a silicon carbide VDMOS (Vertical Double-diffused Metal Oxide Semiconductor) capable of reducing the voltage drop of a body diode, which comprises the following steps of: depositing metal on one side surface of a silicon carbide substrate to form a drain metal layer, and depositing and growing on the other side surface of the silicon carbide substrate to form a drift layer; depositing a barrier layer above the drift layer, and performing etching and ion implantation to form a first well region, a second well region and a source region; removing the barrier layer, and then depositing to form an insulating dielectric layer; a barrier layer is formed through deposition, and a first source electrode metal area, an ohmic contact layer and a second source electrode metal area are formed through etching and metal deposition; and removing the original barrier layer, re-forming the barrier layer, etching the barrier layer and the gate dielectric layer, forming the through