Manufacturing method of silicon carbide trench double-gate MOSFET

• Main Authors: ZHANG YUJIE, SHI GUANGYAN, ZHANG CHANGSHA, LI YUNJI
• Format: Patent
• Language: Chinese; English
• Published: 26.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a silicon carbide trench double-gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which comprises the following steps of: forming a drain metal layer on the lower side surface of a silicon carbide substrate, and forming a drift layer on the upper side surface of the silicon carbide substrate; forming a gate dielectric etching region above the drift layer; performing dry oxygen oxidation on the gate dielectric etching region to form a gate dielectric layer; removing the barrier layer, forming a barrier layer again, etching to form a through hole, and performing metal deposition to form a second grid electrode; performing ion implantation on the drift layer to form a well region; performing ion implantation on the well region to form a source region; performing metal deposition to form a source metal layer; etching the gate dielectric layer and the second gate to form a gate region, performing metal deposition to form a first gate, and removing the