Pattern and method for monitoring epitaxial concentration in deep trench of super junction device

• Main Authors: XU HAOWEN, ZHI LIMING, ZHANG GUOHUA
• Format: Patent
• Language: Chinese; English
• Published: 23.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a graph and a method for monitoring epitaxial concentration in a deep groove of a super junction device, and the method comprises the steps: sequentially arranging a plurality of Testkey deep grooves in a scribing groove in a wafer in the direction of a scribing line, wherein the Testkey deep grooves are equal in interval and depth, and the opening CD values of the Testkey deep grooves are gradually changed; the cross sections of the plurality of Testkey deep grooves are in the shape of an inverted trapezoid; the opening CD value of the deep groove is equivalently increased or decreased progressively; measuring parameters of the plurality of Testkey deep grooves to obtain Rs, and converting to obtain values of a plurality of conductance G; forming a rectangular coordinate system by taking the CD value as an X axis and the conductance G as a Y axis; substituting the converted values of the conductance G into the rectangular coordinate system, and fitting data points into a straight line