Integrated circuit device

An integrated circuit device includes: an insulating structure; a source/drain region on the insulating structure; a pair of bottom semiconductor sheets spaced apart from each other in a first horizontal direction, the source/drain region being located between the pair of bottom semiconductor sheets...

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Bibliographic Details
Main Authors KIM YU-BIN, KIM SANG-YONG, SHIN IL GYOU, NOH HYUN-HO
Format Patent
LanguageChinese
English
Published 19.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit device includes: an insulating structure; a source/drain region on the insulating structure; a pair of bottom semiconductor sheets spaced apart from each other in a first horizontal direction, the source/drain region being located between the pair of bottom semiconductor sheets; a pair of channel regions spaced apart from the insulating structure, the bottom semiconductor wafer being located between the pair of channel regions and the insulating structure; a pair of gate lines on the bottom semiconductor sheet and extending on the pair of channel regions, respectively, and extending lengthwise in a second horizontal direction perpendicular to the first horizontal direction; and a backside contact structure extending through the insulating structure to contact a bottom surface of the source/drain region, the backside contact structure includes a first contact portion whose width in the first horizontal direction increases toward the source/drain region and a second contact portion whose w
Bibliography:Application Number: CN202311592618