Method for producing n-type single crystal silicon

• Main Authors: EMOTO MIKI, ONODA TORU, ASANO TAKUYA, SAEKI KOICHI
• Format: Patent
• Language: Chinese; English
• Published: 19.07.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a method for manufacturing n-type single crystal silicon. A method for producing an n-type single crystal silicon by melting a polycrystalline silicon raw material comprising a plurality of polycrystalline silicon chunks, the method comprising a step for producing an n-type single crystal silicon having a resistivity of 10000 [Omega] cm or more without adding a dopant when the polycrystalline silicon raw material is melted, and a step for producing an n-type single crystal silicon having a resistivity of 10000 [Omega] cm or more as the polycrystalline silicon raw material, a polycrystalline silicon raw material is used in which the total concentration of donor elements present in the main body of the polycrystalline silicon raw material is Cd1 [ppta], the total concentration of acceptor elements present in the main body of the polycrystalline silicon raw material is Ca1 [ppta], and the total concentration of donor elements present on the surface of the polycrystalline silicon raw mate