Power semiconductor module, power semiconductor device, and method for producing same

A power semiconductor module includes: an electrically insulating frame; a plurality of power semiconductor dies housed within the electrically insulating frame and electrically interconnected to form a power electronic circuit; an active temperature sensor die housed within the electrically insulat...

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Bibliographic Details
Main Authors NEUBERT MICHAEL, WALTER THOMAS, KRAVCHENKO ANDREY, CHRISTIAN SCHWEIKERT
Format Patent
LanguageChinese
English
Published 16.07.2024
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Summary:A power semiconductor module includes: an electrically insulating frame; a plurality of power semiconductor dies housed within the electrically insulating frame and electrically interconnected to form a power electronic circuit; an active temperature sensor die housed within the electrically insulating frame and including an integrated current source; a first temperature sensing terminal electrically connected to a first contact pad of the active temperature sensor die; and a second temperature sensing terminal electrically connected to a second contact pad of the active temperature sensor die. A discrete power semiconductor device and methods of producing the module and discrete device are also described. 一种功率半导体模块,包括:电绝缘框架;多个功率半导体管芯,被容纳在所述电绝缘框架内并且电互连以形成功率电子电路;有源温度传感器管芯,被容纳在所述电绝缘框架内且包括集成电流源;第一温度感测端子,电连接到所述有源温度传感器管芯的第一接触焊盘;以及第二温度感测端子,电连接到所述有源温度传感器管芯的第二接触焊盘。还描述了一种分立功率半导体装置以及生产该模块和分立装置的方法。
Bibliography:Application Number: CN202410058242