Deposition of high compressive stress thermally stable nitride films

• Main Authors: HAMMA, SUMONA, SHAIKH FAYAZ A
• Format: Patent
• Language: Chinese; English
• Published: 12.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A high stress, thermally stable compressed nitride film is deposited on a semiconductor substrate. A compressed nitride film may be deposited by plasma enhanced chemical vapor deposition (PECVD) under conditions that produce a compressed nitride film having a high compressive film stress and a minimum stress offset when exposed to a temperature higher than a deposition temperature of the compressed nitride. In some implementations, the compressed nitride film is a silicon nitride film. PECVD conditions can reduce the number of Si-H bonds in silicon nitride to achieve improved thermal stability. In some implementations, a high stress, thermally stable nitride film is deposited on the backside of a semiconductor substrate for wafer bend compensation. 在半导体衬底上沉积高应力、热稳定的压缩氮化物膜。可以通过等离子体增强化学气相沉积(PECVD)在产生具有高压缩膜应力并且当暴露于高于压缩氮化物的沉积温度的温度时具有最小应力偏移的压缩氮化物膜的条件下沉积压缩氮化物膜。在一些实现方案中，压缩氮化物膜是氮化硅膜。PECVD条件可以减少氮化硅中的Si-H键的数量以获得改善的热稳定性。在一些实现方案中，高应力、热稳定氮化物膜沉积在半导体衬底的背面上以用于晶片弯曲补偿。