Semiconductor element and manufacturing method thereof

The invention discloses a semiconductor element and a manufacturing method thereof, and the semiconductor element comprises a fin-shaped structure disposed on a substrate; and the epitaxial semiconductor layer is arranged at the upper part of the fin-shaped structure, and the epitaxial semiconductor...

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Bibliographic Details
Main Authors DING XU, WANG YUREN, CHEN GUANGXIU, WANG SHAOWEI, WU SHOUHONG
Format Patent
LanguageChinese
English
Published 12.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a semiconductor element and a manufacturing method thereof, and the semiconductor element comprises a fin-shaped structure disposed on a substrate; and the epitaxial semiconductor layer is arranged at the upper part of the fin-shaped structure, and the epitaxial semiconductor layer is provided with a bottom recess. The epitaxial semiconductor layer has a bilaterally symmetrical concave polygonal cross section. 本发明公开一种半导体元件及其制作方法，其中该半导体元件包含：一鳍状结构，设置于一基底上；以及一外延半导体层，设置于该鳍状结构的上部，且该外延半导体层具有一底部凹陷。该外延半导体层具有左右对称的凹多边形横截面。
Bibliography:Application Number: CN202310093654