Semiconductor element and manufacturing method thereof
The invention discloses a semiconductor element and a manufacturing method thereof, and the semiconductor element comprises a fin-shaped structure disposed on a substrate; and the epitaxial semiconductor layer is arranged at the upper part of the fin-shaped structure, and the epitaxial semiconductor...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
12.07.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a semiconductor element and a manufacturing method thereof, and the semiconductor element comprises a fin-shaped structure disposed on a substrate; and the epitaxial semiconductor layer is arranged at the upper part of the fin-shaped structure, and the epitaxial semiconductor layer is provided with a bottom recess. The epitaxial semiconductor layer has a bilaterally symmetrical concave polygonal cross section.
本发明公开一种半导体元件及其制作方法,其中该半导体元件包含:一鳍状结构,设置于一基底上;以及一外延半导体层,设置于该鳍状结构的上部,且该外延半导体层具有一底部凹陷。该外延半导体层具有左右对称的凹多边形横截面。 |
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Bibliography: | Application Number: CN202310093654 |