Semiconductor memory device

• Main Authors: LEE KI HONG, LEE DONG HUN, KIM JIN-GUK, LEE SEONGHUN, CHUNG SUNG-YONG, JANG JUNG-SIK, WU SHIRONG, CHOI JUNG-DAL, DONG SUN SHEEN
• Format: Patent
• Language: Chinese; English
• Published: 09.07.2024
• Subjects: ELECTRICITY

The techniques include semiconductor memory devices. The semiconductor memory device includes: a first channel pattern and a second channel pattern each extending in a vertical direction and facing each other; a channel separation pattern formed between the first channel pattern and the second channel pattern and extending in a vertical direction; a stack including conductive patterns, each of which surrounds the first channel pattern, the second channel pattern, and the channel separation pattern and is stacked spaced apart from each other in the vertical direction; a first memory pattern disposed between each conductive pattern and the first channel pattern; and a second memory pattern disposed between each conductive pattern and the second channel pattern. 本技术包括半导体存储器装置。半导体存储器装置包括：各自在垂直方向上延伸并且彼此面对的第一沟道图案和第二沟道图案；形成在第一沟道图案和第二沟道图案之间并在垂直方向上延伸的沟道分隔图案；包括导电图案的层叠物，每个导电图案围绕第一沟道图案、第二沟道图案和沟道分隔图案并且在垂直方向上彼此间隔开地层叠；设置在每个导电图案和第一沟道图案之间的第一存储器图案；以及设置在每个导电图案和第二沟道图案之间的第二存储器图案。