MRAM (Magnetic Random Access Memory) unit, manufacturing method thereof and MRAM chip

• Main Authors: HOU YANTING, ZHENG ZEJIE
• Format: Patent
• Language: Chinese; English
• Published: 02.07.2024
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention provides an MRAM (Magnetic Random Access Memory) unit, a manufacturing method thereof and an MRAM chip. The MRAM unit comprises a one-time programmable memory unit which comprises a first transistor and a first MTJ unit which are electrically connected; the multi-time programmable storage unit comprises a second transistor and a second MTJ unit which are electrically connected, the resistance value of the second transistor is larger than that of the first transistor, and the first MTJ unit and the second MTJ unit have the same resistance value and the same size. The structure does not influence the normal work of the MTP unit, so that the one-time writing of the MRAM unit can be ensured without changing the size or the surface roughness of the MTJ, and the problem that the process difficulty is increased in order to ensure the writing of the MRAM in the prior art is solved; moreover, the first MTJ unit and the second MTJ unit have the same size, so that the OTP unit and the MTP unit can be forme