Asymmetric trench SiC-MOSFET device integrated with embedded source channel low-barrier diode

• Main Authors: ZHOU YANGQI, HUANG YI, XIAO YUFAN, CHEN WEIZHONG, GAO SHENG
• Format: Patent
• Language: Chinese; English
• Published: 28.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to an asymmetric trench SiC-MOSFET device integrated with an embedded source channel low-barrier diode, and belongs to the technical field of semiconductor power devices. Source electrode groove polycrystalline silicon and a source electrode N + region are etched in a P + shiel...