Asymmetric trench SiC-MOSFET device integrated with embedded source channel low-barrier diode

• Main Authors: ZHOU YANGQI, HUANG YI, XIAO YUFAN, CHEN WEIZHONG, GAO SHENG
• Format: Patent
• Language: Chinese; English
• Published: 28.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to an asymmetric trench SiC-MOSFET device integrated with an embedded source channel low-barrier diode, and belongs to the technical field of semiconductor power devices. Source electrode groove polycrystalline silicon and a source electrode N + region are etched in a P + shielding region of a traditional asymmetric groove SiC-MOSFET device, meanwhile, a P-base channel with a low potential barrier is introduced beside a groove source electrode, a P-base depletion layer charge enable band is bent, and therefore an LBD pointing to the N + source region from a JFET region is formed at a SiC/SiO2 interface. The turn-on voltage drop of the LBD is 1.9 V, which is about 2/3 of that of a PN junction body diode. And the bipolar degeneration effect is eliminated through the inhibition effect of the LBD on holes. In addition, part of the trench gate is changed into the virtual gate, the area of the drift region covered by the gate is reduced, the gate leakage charge and the feedback capacitance are