METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device is provided. The method includes forming a first photoresist (PR) pattern by exposing a first field region of a first PR layer, forming a second PR pattern by exposing a first top field region and a first bottom field region of a second PR layer, meas...

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Bibliographic Details
Main Authors LEE SEUNG-YUN, LEE JUNG-JIN, IM IN-BEOM, HUANG CAN
Format Patent
LanguageChinese
English
Published 28.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device is provided. The method includes forming a first photoresist (PR) pattern by exposing a first field region of a first PR layer, forming a second PR pattern by exposing a first top field region and a first bottom field region of a second PR layer, measuring a first top field overlay of the first top field region and a first bottom field overlay of the first bottom field region, and determining a top field in-field correction parameter and a bottom field in-field correction parameter based on the first top field in-field overlay and the first bottom field in-field overlay, respectively. 提供了一种制造半导体器件的方法。所述方法包括：通过曝光第一PR层的第一场区域来形成第一光刻胶(PR)图案，通过曝光第二PR层的第一顶部场区域和第一底部场区域来形成第二PR图案，测量第一顶部场区域的第一顶部场内叠加和第一底部场区域的第一底部场内叠加，以及分别基于第一顶部场内叠加和第一底部场内叠加来确定顶部场内校正参数和底部场内校正参数。
Bibliography:Application Number: CN202311387059