Method for producing single crystal diamond, and single crystal diamond

• Main Authors: BREU ALEXANDER, IIZUKA KANJI, OSHIMA RYUJI, SHAKHOV FEDOR
• Format: Patent
• Language: Chinese; English
• Published: 25.06.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; THEIR RELEVANT APPARATUS; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided are: a method for producing a single crystal diamond, whereby it is possible to inexpensively synthesize a single crystal diamond having excellent durability in a short time; and a single crystal diamond. A method for producing a single crystal diamond by exposing a raw material comprising amorphous carbon and a carbon compound to a pressure and temperature of a thermodynamically stable region of the diamond in a phase equilibrium diagram of carbon using a high-temperature and high-pressure method, thereby synthesizing the single crystal diamond. 提供：能廉价地且在短时间内合成耐久性优异的单晶金刚石的单晶金刚石的制造方法和单晶金刚石。单晶金刚石的制造方法如下：使用高温高压法，将由无定形碳和碳化合物构成的原料暴露于碳的相平衡图中金刚石的热力学稳定区域的压力和温度下，从而合成。