Low-metal contact composite tunneling passivation contact solar cell preparation method and cell
The invention provides a low-metal contact composite tunneling passivation contact solar cell preparation method and a tunneling passivation contact solar cell, and belongs to the technical field of solar cells, and the method comprises the steps: alternately preparing a plurality of tunneling silic...
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Main Authors | , , , , , , , , , , , , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
25.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a low-metal contact composite tunneling passivation contact solar cell preparation method and a tunneling passivation contact solar cell, and belongs to the technical field of solar cells, and the method comprises the steps: alternately preparing a plurality of tunneling silicon oxide layers and a plurality of phosphorus-doped polycrystalline silicon layers on the back surface of an N-type silicon wafer to form a multi-lamination structure layer; and carrying out heat treatment on a specified region on the phosphorus-doped polycrystalline silicon layer by using laser, removing the tunneling silicon oxide layer on the outermost layer in the specified region, and meanwhile, keeping a complete multi-lamination structure layer in a pre-prepared metal grid line contact region. The tunneling passivation contact solar cell prepared by the invention can adapt to a thinner phosphorus-doped polycrystalline silicon layer without causing rise of back metal contact recombination, can greatly reduce |
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Bibliography: | Application Number: CN202410385373 |