Low-metal contact composite tunneling passivation contact solar cell preparation method and cell

• Main Authors: SHI JINCHAO, MA HONGNA, WANG HONGFANG, MA CHAO, MENG QINGCHAO, LANG FANG, LI YONGKANG, YAN MEINAN, YU BO, SHAO HAITAO, LIU YING, WANG ZIQIAN, WANG PING, ZHAO LIANG, XING BO, ZHAO XUELING, ZHAI JINYE, PAN MINGCUI, ZHANG WEI, LI CHENXI
• Format: Patent
• Language: Chinese; English
• Published: 25.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a low-metal contact composite tunneling passivation contact solar cell preparation method and a tunneling passivation contact solar cell, and belongs to the technical field of solar cells, and the method comprises the steps: alternately preparing a plurality of tunneling silicon oxide layers and a plurality of phosphorus-doped polycrystalline silicon layers on the back surface of an N-type silicon wafer to form a multi-lamination structure layer; and carrying out heat treatment on a specified region on the phosphorus-doped polycrystalline silicon layer by using laser, removing the tunneling silicon oxide layer on the outermost layer in the specified region, and meanwhile, keeping a complete multi-lamination structure layer in a pre-prepared metal grid line contact region. The tunneling passivation contact solar cell prepared by the invention can adapt to a thinner phosphorus-doped polycrystalline silicon layer without causing rise of back metal contact recombination, can greatly reduce