Electronic device and manufacturing method thereof
The invention provides an electronic device which comprises a substrate, a thin film transistor, a transparent conductive layer, a first organic layer and a second organic layer. The thin film transistor is arranged on the substrate and comprises a drain electrode; the transparent conductive layer i...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
25.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides an electronic device which comprises a substrate, a thin film transistor, a transparent conductive layer, a first organic layer and a second organic layer. The thin film transistor is arranged on the substrate and comprises a drain electrode; the transparent conductive layer is arranged on the drain electrode and is electrically connected with the drain electrode; the first organic layer is arranged between the drain electrode and the transparent conductive layer, and the first organic layer is provided with a through hole; the second organic layer is arranged in the through hole; the electronic device is provided with a gap, a first distance is arranged between the upper surface of the first organic layer and the upper surface of the second organic layer, and the gap and the first distance meet the following formula: 0 lt; the first distance < = 0.8 x gap. The invention also provides a manufacturing method of the electronic device.
本公开提供一种电子装置,包含基板、薄膜晶体管、透明导电层、第一有机层以及第二有机层;薄膜晶体管设置于基板上且 |
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Bibliography: | Application Number: CN202211664927 |