Integrated circuit device

An integrated circuit device may include a substrate, the substrate includes a word line trench extending longitudinally in a first horizontal direction, a gate dielectric film extending along an inner surface of the word line trench, a word line in a lower portion of the word line trench on the gat...

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Bibliographic Details
Main Authors LEE HYUN-JUNG, LEE JIN SEONG, KONG DONG-SIK, LEE JUN-BEOM, KIM JOON-SOO
Format Patent
LanguageChinese
English
Published 21.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit device may include a substrate, the substrate includes a word line trench extending longitudinally in a first horizontal direction, a gate dielectric film extending along an inner surface of the word line trench, a word line in a lower portion of the word line trench on the gate dielectric film and extending longitudinally in the first horizontal direction, and an insulating cover pattern in an upper portion of the word line trench on the word line and extending longitudinally in the first horizontal direction. The word line may include a work function control conductive plug including a conductive metal nitride having a metal dopant, and the work function control conductive plug includes a top surface in contact with a bottom surface of the insulating cap pattern, a sidewall in contact with the gate dielectric film, and a bottom surface in contact with the monolithic layer. 一种集成电路器件可以包括衬底，该衬底包括在第一水平方向上纵向地延伸的字线沟槽、沿着字线沟槽的内表面延伸的栅极电介质膜、位于字线沟槽的在栅极电介质膜上的下部部分中并且在第一水平方向上纵向地延伸的字线、以及位于字线沟槽的在字线上的上
Bibliography:Application Number: CN202311548046