Composite substrate, processing method of composite film, composite substrate and composite film

• Main Authors: LIU GUIYIN, LIU YAMING, ZHANG XIUQUAN
• Format: Patent
• Language: Chinese; English
• Published: 21.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a processing method of a composite substrate and a composite film, the composite substrate and the composite film. The processing method of the composite substrate comprises the following steps: preparing a substrate wafer; performing thermal oxidation treatment on the surface of the substrate wafer to obtain a substrate wafer with a silicon dioxide layer; when the thickness of the silicon dioxide layer is larger than or equal to 500 nm, the surface of the silicon dioxide layer is polished; the thickness range of the polished and removed silicon dioxide layer is 0.1%-10% of the thickness of the silicon dioxide layer; the invention aims to solve the problem that the silicon wafer increases the leakage current of the composite film and seriously affects the electrical property of a semiconductor material because the silicon wafer generates oxidation induced defects when the composite film is processed at present. 本申请提供一种复合衬底、复合薄膜的加工方法及复合衬底、复合薄膜，所述复合衬底的加工方法包括：准备衬底晶圆；对所述衬底晶圆的表面进行热氧化处理，得到带有二