High-purity high-stability cascade arc plasma source

• Main Authors: ZHOU HAISHAN, LIU HAODONG, LUO GUANGNAN, ZHOU WEIYUN, YANG XIN
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2024
• Subjects: CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PLASMA TECHNIQUE; PRINTED CIRCUITS; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

The invention discloses a high-purity and high-stability cascade arc plasma source which comprises a cascade piece, a cathode seat, a cathode air inlet bin arranged on the cathode seat and a plasma channel arranged on the cascade piece. A water cooling channel used for cooling the plasma channel is arranged in the cascade piece, the plasma channel is provided with an inert ring, and the cathode air inlet bin is provided with an air inlet hole. By designing a novel plasma source device structure, the problems that parts of an existing cascade arc plasma source are easy to ablate and plasma is not pure can be effectively solved. 本发明公开了一种高纯净高稳定性级联弧等离子体源，包括级联片、阴极座、设置于阴极座的阴极进气仓，以及设置于级联片的等离子体通道；所述级联片内部设置有用于冷却等离子体通道的水冷通道，且所述等离子体通道设置有惰性环，所述阴极进气仓设置有进气孔。本发明通过设计新的等离子体源的装置结构，能有效解决现有级联弧等离子体源的部件易被烧蚀且等离子体不纯净的问题。