SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

The invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a chuck supporting a substrate; a gas supply unit that supplies a process gas to an edge region of the substrate supported by the chuck; and an edge electrode that surrounds the subs...

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Bibliographic Details
Main Authors LIU GUANGXING, KIM KEON JONG, YOON TAE-HWAN
Format Patent
LanguageChinese
English
Published 14.06.2024
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Summary:The invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a chuck supporting a substrate; a gas supply unit that supplies a process gas to an edge region of the substrate supported by the chuck; and an edge electrode that surrounds the substrate supported by the chuck when viewed from an upper portion such that plasma is generated from the gas, in which the edge electrode has a ring shape, and in which a groove is formed that is recessed in a direction from an inner periphery toward an outer periphery of the edge electrode when viewed from the upper portion. 本发明提供处理基板的设备。处理基板的设备可以包括:卡盘,所述卡盘支撑基板;气体供应单元,所述气体供应单元向被所述卡盘支撑的所述基板的边缘区域供应工艺气体;以及边缘电极,所述边缘电极从上部观察时包围被所述卡盘支撑的所述基板,使得从所述气体产生等离子体,其中,所述边缘电极具有环状,在所述边缘电极上形成有槽,所述槽从在上部观察的所述边缘电极的内周朝向外周的方向凹入。
Bibliography:Application Number: CN202180103971