SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention provides a semiconductor device and a manufacturing method thereof. A semiconductor device includes: a first gate structure including a cell region and a contact region; a channel structure located in the cell region of the first gate structure; and a support member located in the cont...

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Bibliographic Details
Main Authors YUN KYUNGSUNG, LEE KYUNG-JIN, KIM CHEOLYOUNG, BAEK JI YEON, JEONG JI-HYE
Format Patent
LanguageChinese
English
Published 14.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a semiconductor device and a manufacturing method thereof. A semiconductor device includes: a first gate structure including a cell region and a contact region; a channel structure located in the cell region of the first gate structure; and a support member located in the contact region of the first gate structure. 本申请提供半导体装置及其制造方法。一种半导体装置包括：第一栅极结构，所述第一栅极结构包括单元区域和接触区域；沟道结构，所述沟道结构位于所述第一栅极结构的所述单元区域中；以及支撑件，所述支撑件位于所述第一栅极结构的所述接触区域中。
Bibliography:Application Number: CN202311086424