Integrated circuit device and method of forming same

• Main Authors: CHEN DIANHAO, WANG GUANXUN, YANG ZHIXIN, WANG LIANGWEI, HSIAO TSUNGIEH
• Format: Patent
• Language: Chinese; English
• Published: 14.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit device includes a first conductive pad disposed over a first side of a substrate in a first direction. The integrated circuit device includes a second conductive pad disposed over a second side of the substrate in the first direction. The integrated circuit device includes a through substrate via (TSV) extending into a substrate in a first direction. The TSV is disposed between the first conductive pad and the second conductive pad in the first direction. The integrated circuit device includes an air liner disposed between the TSV and the substrate in a second direction different from the first direction. Other embodiments of the invention also provide a method of forming an integrated circuit device. 本发明的实施例提供了一种集成电路器件，该集成电路器件包括第一导电焊盘在第一方向上设置在衬底的第一侧上方。该集成电路器件包括第二导电焊盘在第一方向上设置在衬底的第二侧上方。该集成电路器件包括衬底贯通孔(TSV)在第一方向上延伸至衬底中。TSV在第一方向上设置在第一导电焊盘和第二导电焊盘之间。该集成电路器件包括空气衬垫在与第一方向不同的第二方向上设置在TSV和衬底之间。本发明的另一些实施例还提供了形成集成电路器件的方法。