Device for accelerating aging test and characterization of silicon carbide power field effect transistor

The invention discloses a device for accelerating aging test and characterization of a silicon carbide power field effect transistor, and the device comprises a short-circuit aging acceleration stress system which comprises a tested device, a protection device, a first change-over switch S1, and a s...

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Bibliographic Details
Main Authors GENG LI, GU ZHAOYUAN, YANG MINGCHAO, YANG YI
Format Patent
LanguageChinese
English
Published 14.06.2024
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:The invention discloses a device for accelerating aging test and characterization of a silicon carbide power field effect transistor, and the device comprises a short-circuit aging acceleration stress system which comprises a tested device, a protection device, a first change-over switch S1, and a second change-over switch S2. A drain electrode of the tested device is connected with a first end of the protection device, one end of the dynamic test system and one end of the static electrical characteristic characterization system through a first change-over switch S1, and a grid electrode of the tested device is connected with a first end of the driving system and the other end of the static electrical characteristic characterization system through a second change-over switch S2. The second end of the protection device is connected with the second end of the driving system, the second end of the protection device is connected with one end of the capacitance protection system and one end of the isolation type p
Bibliography:Application Number: CN202410436502