Preparation method of high-through-flow ZnO piezoresistor tablet

The invention discloses a preparation method of a high-through-flow ZnO piezoresistor tablet, and belongs to the field of piezoresistors. The preparation method comprises the following steps: preparing raw materials of the piezoresistor tablet, taking the raw materials according to the proportion, c...

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Bibliographic Details
Main Authors MENG PENGFEI, YIN YUE, HU JUN, GUO JINGKE, HE JINLIANG
Format Patent
LanguageChinese
English
Published 14.06.2024
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
RESISTORS
SLAG
TREATMENT OF NATURAL STONE
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Summary:The invention discloses a preparation method of a high-through-flow ZnO piezoresistor tablet, and belongs to the field of piezoresistors. The preparation method comprises the following steps: preparing raw materials of the piezoresistor tablet, taking the raw materials according to the proportion, carrying out ball-milling mixing and spray-drying pressing to obtain a quadrangular blank, and then carrying out sintering and grinding processes to obtain a tablet finished product. Compared with a traditional cylindrical blank body, the side face is polished through an existing grinding piece process, the porosity of the piezoresistor is reduced, uniformity is improved, meanwhile, the problems that the upper portion of the same cylinder is thinner than the lower portion of the same cylinder and the uniformity is poor when the high-resistance layer and the insulating layer are coated are solved, and the uniformity of the high-resistance layer is greatly improved; the repairing layer is coated to replace a tradition
Bibliography:Application Number: CN202410293069