High-side FET two-stage adaptive turn-off

In one example, a method includes providing a signal to a driver for a switching voltage regulator (200) to turn off a high side field effect transistor (FET) (106A) of the switching voltage regulator (200). The method also includes reducing a voltage at a source of the high side FET (106A). The met...

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Bibliographic Details
Main Authors BRINK STEPHEN I, DA WEI
Format Patent
LanguageChinese
English
Published 07.06.2024
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Summary:In one example, a method includes providing a signal to a driver for a switching voltage regulator (200) to turn off a high side field effect transistor (FET) (106A) of the switching voltage regulator (200). The method also includes reducing a voltage at a source of the high side FET (106A). The method includes turning off a pull-down FET (204) coupled to a gate of the high-side FET (106A) in response to the signal. The method also includes commutation of current from the high side FET (106A) to the low side FET (106B). 在一个示例中，一种方法包括向用于开关电压调节器(200)的驱动器提供信号以关断开关电压调节器(200)的高侧场效应晶体管(FET)(106A)。该方法还包括降低高侧FET(106A)的源极处的电压。该方法包括响应于该信号，关断耦合到高侧FET(106A)的栅极的下拉FET(204)。该方法还包括将电流从高侧FET(106A)换向到低侧FET(106B)。
Bibliography:Application Number: CN202280064912