MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

Disclosed is a memory device including: a base die including a pair of second dies and a first die between the pair of second dies; and a memory stack including memory dies sequentially stacked on the base die in the vertical direction. The first die is electrically connected to the memory stack, an...

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Bibliographic Details
Main Authors YANG YUN-SUK, JUNG YUN-KYUNG, LEE DONG GI, CHOO CHUL-HWAN, LEE EUNG CHANG, AHN MIN-HWAN, YU SEUL-AH
Format Patent
LanguageChinese
English
Published 07.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a memory device including: a base die including a pair of second dies and a first die between the pair of second dies; and a memory stack including memory dies sequentially stacked on the base die in the vertical direction. The first die is electrically connected to the memory stack, and the first die includes a logic transistor including a channel of a three-dimensional structure. 公开了一种存储器件，其包括：基础管芯，其包括一对第二管芯和位于所述一对第二管芯之间的第一管芯；以及存储堆叠，其包括在垂直方向上顺序堆叠在基础管芯上的存储管芯。第一管芯电连接到存储堆叠，并且第一管芯包括逻辑晶体管，该逻辑晶体管包括三维结构的沟道。
Bibliography:Application Number: CN202311156846