Perovskite solar cell and manufacturing method of perovskite thin film layer

The invention discloses a manufacturing method of a perovskite thin film layer, which comprises the following steps of: heating the perovskite thin film layer by using a heat source within a heating time, and cooling the perovskite thin film layer to room temperature of 20-28 DEG C. And irradiating...

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Main Authors WEI ZIJIAN, CHANG JIUN-JYE, SU ZISEN
Format Patent
LanguageChinese
English
Published 04.06.2024
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Abstract The invention discloses a manufacturing method of a perovskite thin film layer, which comprises the following steps of: heating the perovskite thin film layer by using a heat source within a heating time, and cooling the perovskite thin film layer to room temperature of 20-28 DEG C. And irradiating the perovskite thin film layer with infrared rays within a passivation treatment time, so that the perovskite thin film layer forms a passivated perovskite thin film layer. Therefore, trace organic matters on the surface of the perovskite thin film layer are cracked to generate a passivation material, so that the stability of the perovskite thin film layer is improved, and the photoelectric conversion efficiency is further improved. The invention further provides a perovskite solar cell which comprises the passivated perovskite thin film layer. 本发明公开一种钙钛矿薄膜层的制作方法,其包括以热源加热钙钛矿薄膜层在一加热时间内,以及将钙钛矿薄膜层冷却至室温,室温为20℃至28℃。在一钝化处理时间内,以红外线照射钙钛矿薄膜层,使钙钛矿薄膜层形成钝化后钙钛矿薄膜层。借此,使钙钛矿薄膜层表面含微量的有机物裂解,生成钝化性材料,以提升钙钛矿薄膜层的稳定性,进而提升光电转换效率。本发明另提供一种钙
AbstractList The invention discloses a manufacturing method of a perovskite thin film layer, which comprises the following steps of: heating the perovskite thin film layer by using a heat source within a heating time, and cooling the perovskite thin film layer to room temperature of 20-28 DEG C. And irradiating the perovskite thin film layer with infrared rays within a passivation treatment time, so that the perovskite thin film layer forms a passivated perovskite thin film layer. Therefore, trace organic matters on the surface of the perovskite thin film layer are cracked to generate a passivation material, so that the stability of the perovskite thin film layer is improved, and the photoelectric conversion efficiency is further improved. The invention further provides a perovskite solar cell which comprises the passivated perovskite thin film layer. 本发明公开一种钙钛矿薄膜层的制作方法,其包括以热源加热钙钛矿薄膜层在一加热时间内,以及将钙钛矿薄膜层冷却至室温,室温为20℃至28℃。在一钝化处理时间内,以红外线照射钙钛矿薄膜层,使钙钛矿薄膜层形成钝化后钙钛矿薄膜层。借此,使钙钛矿薄膜层表面含微量的有机物裂解,生成钝化性材料,以提升钙钛矿薄膜层的稳定性,进而提升光电转换效率。本发明另提供一种钙
Author WEI ZIJIAN
CHANG JIUN-JYE
SU ZISEN
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Snippet The invention discloses a manufacturing method of a perovskite thin film layer, which comprises the following steps of: heating the perovskite thin film layer...
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Title Perovskite solar cell and manufacturing method of perovskite thin film layer
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