Perovskite solar cell and manufacturing method of perovskite thin film layer
The invention discloses a manufacturing method of a perovskite thin film layer, which comprises the following steps of: heating the perovskite thin film layer by using a heat source within a heating time, and cooling the perovskite thin film layer to room temperature of 20-28 DEG C. And irradiating...
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| Main Authors | , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
04.06.2024
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The invention discloses a manufacturing method of a perovskite thin film layer, which comprises the following steps of: heating the perovskite thin film layer by using a heat source within a heating time, and cooling the perovskite thin film layer to room temperature of 20-28 DEG C. And irradiating the perovskite thin film layer with infrared rays within a passivation treatment time, so that the perovskite thin film layer forms a passivated perovskite thin film layer. Therefore, trace organic matters on the surface of the perovskite thin film layer are cracked to generate a passivation material, so that the stability of the perovskite thin film layer is improved, and the photoelectric conversion efficiency is further improved. The invention further provides a perovskite solar cell which comprises the passivated perovskite thin film layer.
本发明公开一种钙钛矿薄膜层的制作方法，其包括以热源加热钙钛矿薄膜层在一加热时间内，以及将钙钛矿薄膜层冷却至室温，室温为20℃至28℃。在一钝化处理时间内，以红外线照射钙钛矿薄膜层，使钙钛矿薄膜层形成钝化后钙钛矿薄膜层。借此，使钙钛矿薄膜层表面含微量的有机物裂解，生成钝化性材料，以提升钙钛矿薄膜层的稳定性，进而提升光电转换效率。本发明另提供一种钙 |
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| Bibliography: | Application Number: CN202211537556 |