Surface acoustic wave device structure with high power endurance capability

• Main Authors: CHU MENGQUN, MA JINYI, ZHENG ZEYU, LI HUALIN, XU RUIHAO, DU XUESONG, TAN RUI, DONG JIAHE, CHEN YEN-KUANG, LU CHUAN, XIAO QIANG
• Format: Patent
• Language: Chinese; English
• Published: 04.06.2024
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS

The invention discloses a surface acoustic wave device structure with high power endurance capability, which comprises an electrode layer, a piezoelectric film and a substrate, and is characterized in that the piezoelectric film is arranged on the upper surface of the substrate, and the electrode layer is arranged on the surface of the piezoelectric film; and the substrate is made of AlN (aluminum nitride) ceramic, AlN polycrystal or GaN (gallium nitride). When the material of the substrate is AlN ceramic, the piezoelectric thin film solar cell further comprises a functional layer, and the functional layer is located between the piezoelectric thin film and the substrate. And the functional layer is made of at least one of the following materials: an AlN film, silicon dioxide (SiO2) and polycrystalline silicon (PolySi). The temperature compensation layer is located between the substrate and the piezoelectric film; or the temperature compensation layer is located on the piezoelectric film and covers the upper s