Silicon carbide MOSFET power device with self-aligned ohmic process and manufacturing method thereof

• Main Authors: HUANG RUNHUA, ZHANG YUE, BAI SONG, ZHANG TENG, CHEN GURAN, YANG YONG, LI SHIYAN
• Format: Patent
• Language: Chinese; English
• Published: 04.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) power device with a self-alignment ohm process and a manufacturing method thereof. The primitive cell structure of the silicon carbide MOSFET power device comprises an ohmic table top, a silicon carbide substrate, a silicon carbide epitaxial layer, a well region, a source region, a body diode region, a gate dielectric layer, an isolation dielectric layer, a gate electrode, a source electrode and a drain electrode. An ohmic mesa is formed in the body diode region and the source region, and a source ohmic contact is formed in the ohmic mesa. According to the device, self-alignment of the source ohm hole and the body diode region can be realized, the inherent overlay deviation of the ohm process is eliminated, and the phenomenon of non-uniform current of primitive cells is avoided. Meanwhile, on the premise that the size of primitive cells is not increased, the ohmic contact area is remarkably increased, and the