Valve manifold for semiconductor processing

• Main Authors: MILLER AARON BLAKE, BHUMARASETTY, GOPINATH
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A valve manifold for use in a semiconductor processing tool includes a manifold body, a purge gas inlet, a process gas inlet, a manifold outlet, a diverter outlet, a first valve interface, a second valve interface, and a third valve interface. The first valve interface and the third valve interface each include a first port and a second port. The second valve interface includes a first port, a second port, a third port, and a fourth port. 一种使用在半导体处理工具中的阀歧管包括歧管主体、清扫气体入口、处理气体入口、歧管出口、转向出口、第一阀接口、第二阀接口、以及第三阀接口。第一阀接口和第三阀接口各自包括第一端口和第二端口。第二阀接口包括第一端口、第二端口、第三端口、以及第四端口。