Quick-response flexible hydrogen sensor based on gasochromic function and preparation method of quick-response flexible hydrogen sensor

• Main Authors: XIE BO, HU JUN, MAO SONGYUAN, XIA SHENGJIE, MAO XIBING, YAN WENJING, LEE EUNG-JU
• Format: Patent
• Language: Chinese; English
• Published: 31.05.2024
• Subjects: CASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MEASURING; METALLURGY; PERFORMING OPERATIONS; PHYSICS; POWDER METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING; TRANSPORTING; WORKING METALLIC POWDER

The invention discloses a quick-response flexible hydrogen sensor based on a gasochromic function and a preparation method thereof.The flexible hydrogen sensor is of a multi-layer film structure and comprises a heat conduction substrate, a catalytic heat production layer, a gasochromic working layer and a catalyst layer, the catalytic heat production layer can catalyze hydrogen to be subjected to an oxidation-reduction reaction at the room temperature, and the gasochromic working layer can catalyze hydrogen to be subjected to a gasochromic reaction at the room temperature; and the heat is transferred to the gasochromic layer to cause the overall temperature of the device to rise, and the heat conduction substrate is made of a high-temperature-resistant heat conduction material. Compared with a device structure which is not loaded with the catalytic heat production layer, the working temperature of the device is increased through heat produced by the catalytic reaction of the catalytic heat production layer un