Light-emitting diode element, manufacturing method thereof and light-emitting device

• Main Authors: PAN ZIYAN, LAN YONGLING, ZHANG ZHONGYING, LONG SIYI, TU RUQIN, ZHANG TIANYI, ZENG WEIJUN, ZANG YASHU, XU JIN, CHEN SIHE, YANG ZHONGJIE, HUANG SHAOHUA, CHEN GONG, ZHANG WEI
• Format: Patent
• Language: Chinese; English
• Published: 28.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode element, a manufacturing method thereof and a light-emitting device, in the light-emitting diode element, a coarsening structure is formed on one side, far away from a substrate, of a first semiconductor layer structure, and the coarsening structure forms a maze-shaped radioactive ray or a gap, so that the Al element content at a grain boundary is obviously reduced, and the light-emitting efficiency is improved. Therefore, the defect energy level at the grain boundary is reduced, absorption and scattering of photons are weakened, meanwhile, absorption of the photons can be obviously reduced through the labyrinth-shaped radioactive rays or the gaps, propagation of the photons is facilitated, energy attenuation of the photons is reduced through the structure, and the light emitting effect of a component is improved. Scattering, absorption, reflection and the like of the crystal boundary to photons can be weakened, so that attenuation of the photons can be reduced, m