Phototransistor and preparation method thereof

• Main Authors: ZHANG WENRUI, YE JICHUN, HAN DONGYANG
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a phototransistor and a preparation method thereof, and the phototransistor comprises a substrate which comprises a first surface and a second surface which are opposite, and is a collector region; the first contact layer is located on the first surface of the substrate, and the first contact layer is a base region; the second contact layer is located on the first contact layer, and the second contact layer is an emitter region; wherein the second contact layer is of a comb-tooth-shaped structure, so that part of the first contact layer is exposed. The phototransistor disclosed by the invention has the advantages of high responsivity and high external quantum efficiency, and the preparation method of the phototransistor is simple in process, high in operability and wide in application, and has a wide application prospect in the field of photoelectric detection. 本公开提供了一种光电晶体管及其制备方法，其中，所述光电晶体管包括：衬底，所述衬底包括相对的第一表面和第二表面，所述衬底为集电区；第一接触层，位于所述衬底的第一表面上，所述第一接触层为基区；第二接触层，位于所述第一接触层上，所述第二接触层为发射区；其中，所