Ring gate transistor, preparation method thereof and electronic equipment

• Main Authors: WANG WEILIN, LIONEL, BENISTET, FRANCIS, HOU CHAOZHAO
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a gate-all-around transistor, a preparation method thereof and electronic equipment. The embodiment of the invention provides a GAA transistor. According to the GAA transistor, on the basis of a traditional GAA transistor, a first epitaxial doping layer and a second epitaxial doping layer are epitaxially grown between a substrate and a source electrode and between the substrate and a drain electrode and used for cutting off a substrate electric leakage channel between the source electrode and the drain electrode. Moreover, the first epitaxial doping layer and the second epitaxial doping layer are epitaxially grown on the substrate, so that a depletion region formed by the first epitaxial doping layer and the source electrode is limited in the first epitaxial doping layer, and a depletion region formed by the second epitaxial doping layer and the drain electrode is limited in the second epitaxial doping layer and cannot diffuse into the substrate. And a depletion region formed by the fi