Preparation method of semiconductor structure, semiconductor structure, device and equipment

• Main Authors: LIN YIBO, WU HENG, HUANG RU, LU HAORAN, JIANG XUN, SUN JIACHENG, WANG RUNSHENG
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

The invention provides a preparation method of a semiconductor structure, the semiconductor structure, a device and equipment. The method comprises the following steps: forming an active structure on a substrate; forming a front device layer of the front transistor based on the front active structure; carrying out subsequent process treatment on the front-side device layer to form a front-side interconnection layer; any two interconnection layers in the first front interconnection layer, the second front interconnection layer and the third front interconnection layer are electrically connected; reversing the wafer and removing the substrate; forming a back device layer of the back transistor based on the back active structure; performing subsequent process treatment on the back device layer to form a back interconnection layer; any two interconnection layers in the first back face interconnection layer, the second back face interconnection layer and the third back face interconnection layer are electrically c