SiC power semiconductor dynamic saturation voltage test system

• Main Author: LAN CHENGYU
• Format: Patent
• Language: Chinese; English
• Published: 24.05.2024
• Subjects: MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

The invention provides a SiC power semiconductor dynamic saturation voltage test system. The SiC power semiconductor dynamic saturation voltage test system comprises a voltage detection module connected with a SiC power semiconductor; the voltage detection module is configured to detect a voltage between a source electrode and a drain electrode in the SiC power semiconductor in real time to obtain a detection voltage; the processor is configured to obtain and record the detection voltage. According to the system, accurate detection and real-time monitoring of the saturation voltage in the SiC power semiconductor are realized, the cost and the size of the detection system are reduced, and data and theoretical support is provided for reducing the power loss of the SiC power semiconductor and prolonging the service life of the SiC power semiconductor. 本发明提供的一种SiC功率半导体动态饱和电压测试系统，包括：电压检测模块：与SiC功率半导体连接；电压检测模块被配置于实时检测SiC功率半导体中源极和漏极之间的电压，以得到检测电压；处理器：被配置于获取并记录检测电压。该系统实现了对SiC功率半导体中饱和电压的准确检测和实时监测，降低了检测系统的成本和体积，为降低SiC功率半