Preparation method of InP-based DHBT material structure

• Main Authors: WANG YIHU, ZHANG YU, CHEN HONGTAI, FANG YULONG
• Format: Patent
• Language: Chinese; English
• Published: 17.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention provides a preparation method of an InP-based DHBT material structure. The preparation method comprises the following steps: sequentially growing a highly-doped N-type InGaAs collector region contact layer, a low-doped N-type InP collector region layer, a low-doped N-type InGaAsP energy band gradient layer, a highly-doped P-type InGaAs base region layer and a low-doped N-type InP annealing covering layer on a substrate by adopting a metal organic chemical vapor deposition (MOCVD) process; carrying out annealing treatment on the low-doped N-type InP annealing covering layer by adopting a normal-pressure in-situ annealing process; under a set growth condition, sequentially growing a low-doped N-type InP emitter region layer and a high-doped N-type InGaAs emitter region contact layer on the low-doped N-type InP annealing covering layer; wherein the temperature corresponding to the set growth condition is less than or equal to the temperature corresponding to the annealing treatment process; the gro