Power amplifier device with vertical die interconnect structure

• Main Authors: SCHULTZ JOHN G, SHILIMKAR VIKAS, KIM KYUNGNAM
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2024
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS

The invention relates to a power amplifier device with a vertical die interconnect structure. A power amplifier device includes a transistor die having an elongated bond pad coupled to an end of an integrated transistor. The device also includes a substrate formed from a stack of alternating dielectric layers and patterned conductive layers. Elongated die contacts are exposed at the first substrate surface and attached to the elongated bond pads to provide a uniform connection between the die contacts and the elongated bond pads. A vertical interconnect structure is connected to the die contact and extends toward the second substrate surface. The circuit includes a passive component coupled to the second substrate surface and to the vertical interconnect structure. An encapsulation material layer covers the passive component and the surface of the second substrate. A plurality of device interconnects are coupled to the substrate, electrically coupled to the power transistor die, and exposed at a contact surfa