Broadband matching structure and matching method suitable for high-gain, high-sensitivity and low-noise amplifier

• Main Authors: BAI XIAOLIANG, YOU YIKAI, REN GUANGSHENG, WANG ZHEN, YIN YINGZENG, REN JIAN
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2024
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; CONTROL OF AMPLIFICATION; ELECTRICITY

The invention discloses a broadband matching structure and matching method suitable for a high-gain, high-sensitivity and low-noise amplifier, and the structure employs an enhanced pseudo electron mobility transistor (E-pHEMT) to form a two-stage common-source amplifier structure through employing a two-stage cascading mode. The two-stage common-source amplifier structurally comprises an input matching circuit, an inter-stage matching circuit, an output matching circuit, a direct-current biasing circuit and a parallel-series negative feedback circuit, a parallel-series negative feedback circuit is adopted between the grid electrode and the drain electrode of the two-stage transistor, and a small capacitor is inserted between the grid electrode and the source electrode to further improve broadband matching; a common source amplifier structure formed by two stages of cascaded enhanced pseudo electron mobility transistors (E-pHEMT) ATF54143 is adopted, and meanwhile, a broadband matching mode of input end pi-typ