Light emitting diode and manufacturing method thereof

• Main Authors: ZHU CHENQI, CHEN-ZHANG XIAOXIONG, MAO JIATIAN, WANG QUN, GONG YIPIN
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode and a manufacturing method thereof, and belongs to the field of light-emitting devices. The light emitting diode comprises a substrate, a transfer layer, a first semiconductor layer, an active layer and a second semiconductor layer, the transfer layer, the first semiconductor layer, the active layer and the second semiconductor layer are sequentially stacked on the substrate; the transfer layer includes a two-dimensional material layer. According to the light-emitting diode, the substrate does not need to be stripped by adopting a laser stripping technology or a chemical stripping technology, the problem that a stripping surface is damaged when the substrate is stripped by adopting the laser stripping technology can be solved, and meanwhile, the stripping efficiency when the substrate is stripped can be ensured, so that the manufacturing efficiency of the light-emitting diode is improved. 本公开提供了一种发光二极管及其制作方法，属于发光器件领域。该发光二极管包括：衬底、转移层、第一半导体层、有源层和第二半导体层；所述转移层、所述第一半导体